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| savantic semiconductor product specification silicon npn power transistors BU1506DX d escription with to-220f package high voltage high speed switching built-in damper diode. applications for use in horizontal deflection circuits of colour tv receivers. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 7.5 v i c collector current 5 a i cm collector current-peak 8 a i b base current 3 a i bm base current-peak 8 a p c collector dissipation t c =25 32 w t j junction temperature 150 t stg storage temperature -40~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BU1506DX c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =600ma ;i c =0 7.5 13.5 v v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0;l=25mh 700 v v cesat collector-emitter saturation voltage i c =3a; i b =0.79a 5.0 v v besat base-emitter saturation voltage i c =3a; i b =0.79a 1.1 v i ces collector cut-off current v ce =rated;v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =7.5v; i c =0 90 180 ma h fe-1 dc current gain i c =0.3a ; v ce =5v 12 h fe-2 dc current gain i c =3.0a ; v ce =5v 3.8 5.5 7.5 v f diode forward voltage i f =3.0a 1.6 2.0 v c c collector output capacitance i e =0,f=1mhz;v cb =10v 47 pf savantic semiconductor product specification 3 silicon npn power transistors BU1506DX package outline fig.2 outline dimensions |
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